TYPICAL CHARACTERISTICS — 460 - 470 MHz
IMD, INTERMODULATION DISTORTION (dBc)
−30
−35
V
DD
= 28 Vdc, I
DQ
= 1250 mA, f1 = 465 MHz
f2 = 467.5 MHz, Two−Tone Measurements
IMD, INTERMODULATION DISTORTION (dBc)
−25
0
V
DD
= 28 Vdc, P
out
= 100 W (PEP)
I
DQ
= 1250 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 465 MHz
−10
3rd Order
−40
−45
5th Order
−50
−55
−60
10
7th Order
100
P
out
, OUTPUT POWER (WATTS) PEP
200
−20
−30
3rd Order
−40
5th Order
7th Order
−50
0.1
1
TWO−TONE SPACING (MHz)
10
60
Figure 7. Intermodulation Distortion Products
versus Output Power
60
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
P6dB = 53.57 dBm (227 W)
Ideal
P3dB = 52.99 dBm (198 W)
P1dB = 52.21 dBm (166 W)
Actual
P
out
, OUTPUT POWER (dBm)
56
52
48
V
DD
= 28 Vdc, I
DQ
= 1250 mA
Pulsed CW, 8
μsec(on),
1 msec(off)
f = 465 MHz
23
27
31
35
39
44
40
19
P
in
, INPUT POWER (dBm)
Figure 9. Pulse CW Output Power versus
Input Power
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
50
V
DD
= 28 Vdc, I
DQ
= 1250 mA, f = 465 MHz
N−CDMA IS−95 (Pilot, Sync, Paging
Traffic Codes 8 Through 13)
25_C
30
G
ps
20
25_C
10
85_C
η
D
25_C
−30_C
85_C
10
P
out
, OUTPUT POWER (WATTS) AVG.
−75
60
ALT1
T
C
= −30_C
85_C
−59
−30_C
−51
−35
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT1, CHANNEL POWER (dBc)
40
ACPR
−43
−67
25_C
0
1
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain
and Drain Efficiency versus Output Power
MRF5S4140HR3 MRF5S4140HSR3
6
RF Device Data
Freescale Semiconductor
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
