TYPICAL CHARACTERISTICS
−10
IRL, INPUT RETURN LOSS (dB)
IRL
−20
V
DS
= 12 Vdc, I
DQ
= 85 mA
f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA
Γ
S
= 0.868é−115.15_,
Γ
L
= 0.764é−139.11_
−20
ACPR (dBc)
−10
−30
−40
−30
−40
−50
−60
0.01
ACPR
−50
−60
ARCHIVE INFORMATION
P
out
, OUTPUT POWER (WATTS)
Figure 3. W - CDMA ACPR and Input Return
Loss versus Output Power
20
17.5
G T , TRANSDUCER GAIN (dB)
15
V
DS
= 12 Vdc, I
DQ
= 85 mA
f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA
Γ
S
= 0.868é−115.18_,
Γ
L
= 0.764é−139.11_
PAE
40
35
30
G
T
25
20
15
10
5
0
0.01
0.1
P
out
, OUTPUT POWER (WATTS)
1
PAE, POWER ADDED EFFICIENCY (%)
12.5
10
7.5
5
2.5
0
Figure 4. Transducer Gain and Power Added
Efficiency versus Output Power
NOTE:
All data is referenced to package lead interface.
Γ
S
and
Γ
L
are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
MRFG35005MT1
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
0.1
1
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
