Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Saturated Drain Current
(V
DS
= 3.5 Vdc, V
GS
= 0 Vdc)
Off State Leakage Current
(V
GS
= - 0.4 Vdc, V
DS
= 0 Vdc)
Off State Drain Current
(V
DS
= 12 Vdc, V
GS
= - 2.5 Vdc)
Off State Current
(V
DS
= 28.5 Vdc, V
GS
= - 2.5 Vdc)
Gate - Source Cut - off Voltage
(V
DS
= 3.5 Vdc, I
DS
= 8.7 mA)
Quiescent Gate Voltage
(V
DS
= 12 Vdc, I
D
= 80 mA)
Power Gain
(V
DD
= 12 Vdc, I
DQ
= 80 mA, f = 3.55 GHz)
Output Power, 1 dB Compression Point
(V
DD
= 12 Vdc, I
DQ
= 80 mA, f = 3.55 GHz)
Drain Efficiency
(V
DD
= 12 Vdc, I
DQ
= 80 mA, P
out
= 450 mW Avg.,
f = 3.55 GHz)
Adjacent Channel Power Ratio
(V
DD
= 12 Vdc, P
out
= 450 mW Avg., I
DQ
= 80 mA,
f = 3.55 GHz, W - CDMA, 8.5 P/A @ 0.01% Probability,
64 CH, 3.84 MCPS)
Symbol
I
DSS
I
GSS
I
DSO
I
DSX
V
GS(th)
V
GS(Q)
G
ps
P
1dB
h
D
Min
—
—
—
—
- 1.2
- 1.1
10
—
22
Typ
1.7
< 1.0
—
< 1.0
- 0.9
- 0.8
11
4.5
25
Max
—
100
600
9
- 0.7
- 0.6
—
—
—
Unit
Adc
µAdc
µAdc
mAdc
Vdc
Vdc
dB
W
%
ARCHIVE INFORMATION
ACPR
—
- 42
- 39
dBc
MRFG35005MT1
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
