TYPICAL CHARACTERISTICS - 2170 MHz
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
32
IRL
η
D
−13
27
22
V
DD
= 28 Vdc
P
out
= 0.9 W (PEP)
I
DQ
= 12 mA
Two−Tone Measurement,
100 kHz Tone Spacing
−18
−23
17
IMD
G
ps
−28
12
2110
2120
2130
2140
2150
2160
−33
2170
f, FREQUENCY (MHz)
Figure 17. Two-Tone Performance versus
Frequency
13.8
13.4
G ps , POWER GAIN (dB)
13.0
12.6
12.2
11.8
11.4
η
D
P1dB
V
DD
= 28 Vdc
I
DQ
= 12mA
f = 2170 MHz
G
ps
60
50
40
30
20
10
η
D
, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
−20
−25
−30
−35
−40
−45
V
DD
= 28 Vdc
f1 = 2170 MHz, f2 = 2170.1 MHz
Two−Tone Measurement
100 kHz Tone Spacing
I
DQ
= 7.2 mA
20 mA
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
16 mA
9.6 mA
−50
0.01
12 mA
0.1
1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
P
out
, OUTPUT POWER (WATTS) PEP
P
out
, OUTPUT POWER (WATTS) PEP
Figure 18. CW Performance versus Output
Power
Figure 19. Intermodulation Distortion versus
Output Power
IMD,THIRD ORDER INTERMODULATION (dBc)
−20
IMD, INTERMODULATION DISTORTION (dBc)
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
7th Order
5th Order
3rd Order
V
DD
= 28 Vdc, I
DQ
= 12 mA,
f1 = 2170 MHz, f2 = 2170.1 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
−20
V
DD
= 28 Vdc
I
DQ
= 12 mA
f1 = 2170 MHz
f2 = f1 + Tone Spacing
Two −Tone Measurement
−25
−30
−35
1 MHz
10 MHz
−40
−45
0.01
100 kHz
0.1
P
out
, OUTPUT POWER (WATTS) PEP
1
0.01
0.1
P
out
, OUTPUT POWER (WATTS) PEP
1
Figure 20. Intermodulation Distortion
Products versus Output Power
Figure 21. Third Order Intermodulation
Distortion versus Output Power
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
