Freescale Semiconductor
Technical Data
Replaced by MRFG35005NT1. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead - free
terminations.
Document Number: MRFG35005MT1
Rev. 3, 1/2006
MRFG35005MT1
3.5 GHz, 4.5 W, 12 V
POWER FET
GaAs PHEMT
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
linear base station applications.
•
Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,
I
DQ
= 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 450 mWatt
Power Gain — 11 dB
Efficiency — 25%
•
4.5 Watts P1dB @ 3.55 GHz
•
Excellent Phase Linearity and Group Delay Characteristics
•
High Gain, High Efficiency and High Linearity
•
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
ARCHIVE INFORMATION
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Gate - Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
(1)
Operating Case Temperature Range
Symbol
V
DSS
P
D
V
GS
P
in
T
stg
T
ch
T
C
Value
15
10.5
(2)
0.07
(2)
-5
30
- 65 to +150
175
- 20 to +85
Unit
Vdc
W
W/°C
Vdc
dBm
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Class AB
Symbol
R
θJC
Value
14.2
(2)
Unit
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
1
Package Peak Temperature
260
Unit
°C
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Simulated.
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRFG35005MT1
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
