FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability
2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
T
j
=25℃
Parameter
Repetitive peak reverse voltage
Peak forward surge current
Forward continuous current
Storage temperature range
t
p
≦1
s
T
a
=25℃
Test Conditions
Type
1N60
1N60P
1N60
1N60P
1N60
1N60P
Symbol
V
RRM
V
RRM
I
FSM
I
FSM
I
F
I
F
T
stg
Value
40
45
150
500
30
50
-65~+125
Unit
V
V
mA
mA
mA
mA
℃
Maximum Thermal Resistance
T
j
=25℃
Parameter
Junction ambient
Test Conditions
on PC board 50mm×50mm×1.6mm
Symbol
R
thJA
Value
250
Unit
K/W
Formosa MicroSemi CO., LTD.
www.formosams.com
Rev. 2, 22-Nov-2002
1/2
FORMOSA [ FORMOSA MS ]
