H
IGH
D
YNAMIC
R
ANGE
PHEMT
•
FEATURES
♦
21 dBm Output Power at 1-dB
Compression at 18 GHz
♦
9.5 dB Power Gain at 18 GHz
♦
1.0 dB Noise Figure at 18 GHz
♦
55% Power-Added Efficiency
DRAIN
BOND
PAD (2X)
GATE
BOND
PAD (2X)
LP7612
SOURCE
BOND
PAD (2x)
DIE SIZE: 18.0X13.0 mils (460x330
µm)
DIE THICKNESS: 3.9 mils (100
µm)
BONDING PADS: 1.9X1.9 mils (50x50
µm)
•
DESCRIPTION AND APPLICATIONS
The LP7612 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25
µm
by 200
µm
Schottky barrier gate. The recessed “mushroom” gate structure minimizes
parasitic gate-source and gate resistances. The epitaxial structure and processing have been
optimized for high dynamic range. The LP7612 also features Si
3
N
4
passivation and is available in a
P70 ceramic package.
Typical applications include high dynamic range receiver preamplifiers for commercial applications
including Cellular/PCS systems, WLL and WLAN systems, and broadband amplifiers.
•
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25°C
°
Parameter
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
Thermal Resistivity
frequency=18 GHz
Symbol
I
DSS
P-1dB
G-1dB
PAE
I
MAX
G
M
I
GSO
V
P
|V
BDGS
|
|V
BDGD
|
Θ
JC
Test Conditions
V
DS
= 2 V; V
GS
= 0 V
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 2 V; V
GS
= 1 V
V
DS
= 2 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 2 V; I
DS
= 1 mA
I
GS
= 1 mA
I
GD
= 1 mA
-0.25
-6
-8
60
Min
40
19
8
Typ
65
21
9.5
55
125
90
1
-0.8
-7
-9
275
10
-1.5
Max
85
Units
mA
dBm
dB
%
mA
mS
µA
V
V
V
°C/W
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
1/18/01
Email:
sales@filss.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
