LP750SOT89
L
OW
N
OISE
, H
IGH
L
INEARITY
P
ACKAGED
PHEMT
•
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
RF Input Power
Channel Operating Temperature
Storage Temperature
Total Power Dissipation
Notes:
•
•
Symbol
V
DS
V
GS
I
DS
I
G
P
IN
T
CH
T
STG
P
TOT
Test Conditions
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
—
T
Ambient
= 22
±
3
°C
-65
Min
Max
7
-3
I
DSS
7.5
175
175
175
1.75
Units
V
V
mA
mA
mW
ºC
ºC
W
•
•
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Power Dissipation defined as: P
TOT
≡
(P
DC
+ P
IN
) – P
OUT
, where
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
Absolute Maximum Power Dissipation to be de-rated as follows above 25°C:
P
TOT
= 1.75W – (0.012W/°C) x T
PACK
where T
PACK
=
source tab lead temperature
This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these
devices.
•
OPTIMUM POWER OUTPUT MATCHING
Load State
Frequency (GHz)
1.8
2.2
2.5
Magnitude
0.39
0.37
0.43
Phase
-168°
-147°
-135°
•
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
•
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
1/18/02
Email:
sales@filss.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
