LP750P100
P
ACKAGED
0.5 W
ATT
P
OWER
PHEMT
•
RECOMMENDED CONTINUOUS OPERATING LIMITS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
RF Input Power
Channel Operating Temperature
Ambient Temperature
Symbol
V
DS
V
GS
I
DS
P
IN
T
CH
T
STG
Nominal
8
-1.2
0.8 I
DSS
150
150
-20/50
Units
V
V
mA
mW
°C
°C
Notes:
Device should be operated at or below Recommended Continuous Operating Limits for reliable performance.
•
ABSOLUTE RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
RF Input Power
Channel Operating Temperature
Storage Temperature
to the device.
Symbol
V
DS
V
GS
I
DS
I
G
P
IN
T
CH
T
STG
Test Conditions
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
—
Min
Max
12
-4
200% I
DSS
35
250
175
Units
V
V
mA
mA
mW
ºC
ºC
-65
175
Notes:
Even temporary operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage
•
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly and,
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
•
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filtronicsolidstate.com
Revised:
03/02/01
Email:
sales@filss.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
