2 W P
OWER
PHEMT
•
FEATURES
♦
33.5 dBm Output Power
at 1-dB Compression at 18 GHz
♦
7 dB Power Gain at 18 GHz
♦
30.5 dBm Output Power
at 1-dB Compression at 3.3V
♦
45% Power-Added Efficiency
DRAIN
BOND
PAD (4X)
SOURCE
BOND
PAD (2x)
GATE
BOND
PAD (4X)
LP3000
•
DESCRIPTION AND APPLICATIONS
DIE SIZE: 28.3X16.5 mils (720x420
µm)
DIE THICKNESS: 2.6 mils (65
µm)
BONDING PADS: 1.9X2.4 mils (50x60
µm)
The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25
µm
by 3000
µm
Schottky barrier gate. The recessed “mushroom” gate structure
minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have
been optimized for reliable high-power applications. The LP3000 is also available in a P100 flanged
ceramic package and in the low cost plastic SOT89 package.
Typical applications include commercial and other high-performance power amplifiers.
•
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25°C
°
Parameter
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
Thermal Resistivity
frequency=18 GHz
Symbol
I
DSS
P-1dB
G-1dB
PAE
I
MAX
G
M
I
GSO
V
P
|V
BDGS
|
|V
BDGD
|
Θ
JC
Test Conditions
V
DS
= 2 V; V
GS
= 0 V
V
DS
= 8 V; I
DS
= 50% I
DSS
V
DS
= 8 V; I
DS
= 50% I
DSS
V
DS
= 8 V; I
DS
= 50% I
DSS
V
DS
= 2 V; V
GS
= 1 V
V
DS
= 2 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 2 V; I
DS
= 10 mA
I
GS
= 15 mA
I
GD
= 15 mA
-0.25
-12
-12
725
Min
800
33
4
Typ
1060
33.5
6
45
1700
900
15
-1.2
-15
-16
20
125
-2.0
Max
1100
Units
mA
dBm
dB
%
mA
mS
µA
V
V
V
°C/W
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
1/18/01
Email:
sales@filss.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
