L
OW
N
OISE
PHEMT MMIC
•
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain Voltage
Operating Current
RF Input Power
Total Power Dissipation
Channel Operating Temperature
Storage Temperature
Maximum Assembly Temperature
(1 min. max.)
Notes:
•
•
•
Symbol
V
D
I
OP
P
IN
P
TOT
T
CH
T
STG
T
MAX
Test Conditions
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
—
—
0
Min
Max
4
90
-15
0.4
150
85
300
Units
V
mA
dBm
W
ºC
ºC
ºC
LMA422
•
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Recommended Continuous Operating Limits should be observed for reliable device operation.
Power Dissipation defined as: P
TOT
≡
(P
DC
+ P
IN
) – P
OUT
, where
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when
handling these devices.
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
12/05/00
Email:
sales@filss.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
