PRELIMINARY
•
PERFORMANCE
♦
20 dBm Output Power (P
1dB
)
♦
21 dB Power Gain (G
1dB
) at 1.85 GHz
♦
0.7 dB Noise Figure at 1.85 GHz
♦
30 dBm Output IP3
♦
50% Power-Added Efficiency at 1.85 GHz
♦
Useable Gain to 24 GHz
♦
Evaluation Boards Available
FPD7612P70
H
I
-F
REQUENCY
P
ACKAGED P
HEMT
GATE LEAD IS ANGLED
•
DESCRIPTION AND APPLICATIONS
The
FPD7612P70
is a packaged
depletion mode
AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT). It utilizes a 0.25
µm
x 200
µm
Schottky barrier
Gate,
defined by
high-resolution stepper-based
photolithography.
.
The
FPD7612
is also available in die form .
Typical applications include gain blocks and medium power stages for applications to 26 GHz.
•
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Power at 1dB Gain Compression
Gain at 1dB Gain Compression
Power-Added Efficiency
Maximum Stable Gain (S
21
/S
12
)
f
= 12 GHz
f
= 18 GHz
Noise Figure
Output Third-Order Intercept Point
P
OUT
= 9 dBm SCL
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
I
DSS
I
MAX
G
M
I
GSO
|V
P
|
|V
BDGS
|
|V
BDGD
|
θ
JC
V
DS
= 1.3 V; V
GS
= 0 V
V
DS
= 1.3 V; V
GS
≅
+1 V
V
DS
= 1.3 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 1.3 V; I
DS
= 0.2 mA
I
GS
= 0.2 mA
I
GD
= 0.2 mA
V
DS
> 3V
0.7
12
14.5
45
60
120
80
1
0.9
14
16
335
10
1.3
75
mA
mA
mS
µA
V
V
V
°C/W
NF
IP3
V
DS
= 5 V; I
DS
= 25% I
DSS
V
DS
= 5V; I
DS
= 50% I
DSS
Symbol
P
1dB
SSG
PAE
MSG
Test Conditions
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 50% I
DSS
;
P
OUT
= P
1dB
V
DS
= 5 V; I
DS
= 50% I
DSS
14
10
0.7
30
dB
dBm
Min
Typ
20
21
45
Max
Units
dBm
dB
%
RF SPECIFICATIONS MEASURED AT
f
= 1850 MHz USING CW SIGNAL (except as noted)
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://www.filtrionic.co.uk/semis
Revised:
7/15/05
Email:
sales@filcsi.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
