Datasheet v3.0
TYPICAL TUNED RF PERFORMANCE:
Power Transfer Characteristic
Drain Efficiency and PAE
VDS = 5V IDS = 50% IDSS at f = 1.85 GHz
26.0
25.5
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
-0.50
60.0%
50.0%
40.0%
30.0%
20.0%
10.0%
60.0%
50.0%
40.0%
30.0%
20.0%
10.0%
PAE
Eff.
Pout (dBm)
Comp Point
25.0
24.5
24.0
23.5
23.0
22.5
22.0
4
5
6
7
8
9
10
11
12
1
3
5
7
9
11
Input Power (dBm)
Input Power (dBm)
NOTE: Typical power and efficiency is shown above. The devices were biased nominally at VDS = 5V, IDS = 50%
of IDSS, at a test frequency of 1.85 GHz. The test devices were tuned (input and output tuning) for maximum
output power at 1dB gain compression.
Typical Intermodulation Performance
VDS = 5V IDS = 50% IDSS at f = 1.85GHz
-23.00
20
Pout (dBm)
3rds (dBc)
18
16
14
12
10
-28.00
-33.00
-38.00
-43.00
-7.1
-6.0
-5.0
-4.0
-3.0
-2.1
-1.0
0.0
1.0
1.9
Input Power (dBm)
Note:
intermodulation performance. This yields OIP3
values of about P1dB 14dBm. This IMD
pHEMT
devices have
enhanced
+
enhancement is affected by the quiescent bias and
the matching applied to the device.
DC IV Curves FPD750SOT89
0.30
0.25
0.20
0.15
0.10
0.05
0.00
Note: The recommended method for measuring IDSS, or
any particular IDS, is to set the Drain-Source voltage (VDS
)
at 1.3V. This measurement point avoids the onset of
spurious self-oscillation which would normally distort the
current measurement (this effect has been filtered from
the I-V curves presented above). Setting the VDS > 1.3V
will generally cause errors in the current measurements,
even in stabilized circuits.
VG=-1.50
VG=-1.25V
VG=-1.00V
VG=-0.75V
VG=-0.50V
VG=-0.25V
VG=0V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Drain-Source Voltage (V)
4
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
