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FPD750SOT343E 参数 Datasheet PDF下载

FPD750SOT343E图片预览
型号: FPD750SOT343E
PDF下载: 下载PDF文件 查看货源
内容描述: 低噪声高线性度PACKAGED PHEMT [LOW NOISE HIGH LINEARITY PACKAGED PHEMT]
分类和应用: 晶体晶体管
文件页数/大小: 11 页 / 684 K
品牌: FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
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FPD750SOT343
Datasheet v3.0
R
EFERENCE
D
ESIGN
(0.9GH
Z
):
F
REQUENCY
Gain
P1dB
OIP3
1
N.F.
S11
S22
Vd
Vg
Id
GH
Z
dB
dBm
dBm
dB
dB
dB
V
V
mA
0.9
22
20
32
0.5
-5
-10
3.3
-0.4 to -0.6
40
1. OIP3 measured at Pout of 9dBm per
tone
Measured Gain and Return Loss
B
OARD
L
AYOUT
:
Vg
15pF
0.01uF
15pF
20
O
Lg
33pF
L1
L2
Ld
33pF
0.01uF
Vd
+
1.0uF
+
Q1
0.63"
1.45"
Component Values
Component
Lg
Ld
L1
L2
Value
56nH
56nH
15nH
4.7nH
Description
LL1608 Toko chip inductor
LL1608 Toko chip inductor
LL1608 Toko chip inductor
LL1608 Toko chip inductor
FPD750SOT343 EVAL Board -Vg
Schematic
0.01uF
@ 900MHz
15pF
Vd
1.0uF
0.01uF
15pF
56 nH
L2
33pF
RF OUT
20 Ohm
56 nH
L1
33pF
RF IN
Eval board material - 31mil thick FR4 with 1/2 Ounce Cu on
both sides
D.C. Blocking capacitors are ATC series 600S. A tantalum 1.0µF is used at the drain terminal. All
other capacitors are 0603 and 0805 standard chip capacitors. A 0603 size 20 Ohm Chip resistor from
Vishay is used on the gate D.C. bias line for stability.
5
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com