FPD4000AS
2.5W P
ACKAGED
P
OWER P
HEMT
•
BIASING GUIDELINES
Active bias circuits provide good performance stabilization over variations of operating
temperature, but require a larger number of components compared to self-bias or dual-biased.
Such circuits should include provisions to ensure that Gate bias is applied before Drain bias,
otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for
additional information.
Dual-bias circuits are relatively simple to implement, but will require a regulated negative
voltage supply for depletion-mode devices such as the FPD1000AS.
Self-biased circuits employ an RF-bypassed Source resistor to provide the negative Gate-Source
bias voltage, and such circuits provide some temperature stabilization for the device. A nominal
value for circuit development is 3.25
Ω
for the recommended 200mA operating point.
The recommended 200mA bias point is nominally a Class AB mode. A small amount of RF gain
expansion prior to the onset of compression is normal for this operating point.
•
PACKAGE OUTLINE AND RECOMMENDED PC BOARD LAYOUT
(dimensions in millimeters – mm)
PACKAGE MARKING
CODE
Example:
f1ZD
P1F
f
= Filtronic
1ZD = Lot / Date Code
P1F = Status, Part Code,
Part Type
All information and specifications subject to change without notice.
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://
www.filtronic.co.uk/semis
Revised:
05/26/05
Email:
sales@filcsi.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
