FPD3000SOT89
Datasheet v3.0
T
YPICAL
T
UNED
RF P
ERFORMANCE
:
Power Transfer Characteristic
45%
40%
Drain Efficiency and PAE
45%
40%
35%
30%
25%
20%
PAE
15%
10%
5%
0%
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
Input Power (dBm)
Eff.
15%
10%
5%
0%
Drain Efficiency (%)
32.0
31.0
Pout (dBm)
30.0
Output Power (dBm)
29.0
Comp Point
3.25
2.75
35%
2.25
Gain Compression, (dB)
30%
PAE (%)
25%
20%
1.75
28.0
1.25
27.0
0.75
26.0
25.0
24.0
23.0
11.0
0.25
-0.25
-0.75
23.0
13.0
15.0
17.0
Input Power (dBm)
19.0
21.0
NOTE: Typical power and efficiency is shown above. The devices were biased nominally at V
DS
= 5V, I
DS
= 50% of I
DSS
, at a test frequency of 1.85 GHz. The test devices were tuned (input and output tuning) for
maximum output power at 1dB gain compression.
Typical Intermodulation performance
VDS = 5V, IDS = 50% IDSS at f = 1.85GHz
-40.00
21
Pout (dBm)
3rds (dBc)
-42.00
-44.00
-46.00
-48.00
3rd Order IM Products (dBc)
19
Output Power (dBm)
17
-50.00
-52.00
15
-54.00
13
-56.00
-58.00
11
0.7
1.7
2.8
3.8
4.7
5.7
6.8
7.8
8.8
9.8
Inout Power (dBm)
-60.00
MSG
Note: pHEMT devices have enhanced
intermodulation performance. This yields OIP3
values of about P1dB + 14 dB. This IMD
enhancement is affected by the quiescent bias
and the matching applied to the device.
35
30
25
20
15
10
FPD3000SOT89 5V / 50%IDSS
MSG
S21
DC IV Curves FPD3000SOT89
1.2
Mag S21
VG=-1.50V
VG=-1.25V
VG=-1.00V
VG=-0.75V
VG=-0.50V
VG=-0.25V
VG=0V
5.5
6.0
T
YPICAL
I-V C
HARACTERISTICS
:
&
1.0
Drain-Source Voltage (A)
0.8
0.6
0.4
0.2
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Drain-Source Voltage (V)
5
Note: The recommended method for measuring
I
DSS
, or any particular I
DS
, is to set the Drain-Source
0
voltage
1.5
DS
)
2.5
1.3V. This measurement
7.5 8
(V
at
point
0.5
3.5
4.5
5.5
6.5
avoids the onset of
Frequency (GHz)
spurious self-oscillation which
would normally distort the current measurement
(this effect has been filtered from the I-V curves
presented above). Setting the V
DS
> 1.3V will
generally
cause
errors
in
the
current
measurements, even in stabilized circuits.
3
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
