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FPD200 参数 Datasheet PDF下载

FPD200图片预览
型号: FPD200
PDF下载: 下载PDF文件 查看货源
内容描述: 通用PHEMT DIE [GENERAL PURPOSE PHEMT DIE]
分类和应用:
文件页数/大小: 4 页 / 253 K
品牌: FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
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FPD200
Datasheet v3.0
A
BSOLUTE
M
AXIMUM
R
ATING
1
:
P
ARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
RF Input Power
Channel Operating Temperature
Storage Temperature
Total Power Dissipation
Gain Compression
4
Simultaneous Combination of Limits
2 or more Max. Limits
80%
S
YMBOL
VDS
VGS
IDS
IG
PIN
TCH
TSTG
PTOT
Comp.
T
EST
C
ONDITIONS
6
-3V < VGS < -0.5V
0V < VDS < +8V
For VDS < 2V
Forward or reverse current
Under any acceptable bias state
Under any acceptable bias state
Non-Operating Storage
See De-Rating Note below
Under any bias conditions
A
BSOLUTE
M
AXIMUM
8V
-3V
IDSS
10mA
20dBm
175°C
-65°C to 150°C
0.5W
5dB
Notes:
1
T
Ambient
= 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause
permanent damage to the device
2
Total Power Dissipation defined as: P
TOT
(P
DC
+ P
IN
) – P
OUT
,
where P
DC
: DC Bias Power, P
IN
: RF Input Power, P
OUT
: RF Output Power
3
Total Power Dissipation to be de-rated as follows above 22°C:
P
TOT
= 500mW - (3.6mW/°C) x T
HS
where T
HS
= heatsink or ambient temperature above 22°C
Example: For a 85°C carrier temperature: P
TOT
= 500 - (3.6mW x (85 – 22)) = 0.27W
4
Users should avoid exceeding 80% of 2 or more Limits simultaneously
5
Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.
6
Operating at absolute maximum VD continuously is not recommended. If operation at 8V is considered then IDS
must be reduced in order to keep the part within it's thermal power dissipation limits. Therefore VGS is restricted
to < -0.5V.
P
AD
L
AYOUT
:
PAD
D
ESCRIPTION
P
IN
C
OORDINATES
(µm)
C1
A
C2
B
A
B
C1/C2
Gate Pad
Drain Pad
Source Pad
90, 200
320, 200
200, 290/110
Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of bond pad opening
D
IE
S
IZE
(µm)
400 x 400
D
IE
T
HICKNESS
(µm)
75
M
IN
. B
OND PAD
O
PENING
(µm x
µm
)
70 x 80
2
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com