FPD1500SOT89
Datasheet v3.0
A
BSOLUTE
M
AXIMUM
R
ATING
1
:
P
ARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
RF Input Power
2
S
YMBOL
VDS
VGS
IDS
IG
PIN
TCH
TSTG
PTOT
Comp.
3
T
EST
C
ONDITIONS
-3V < VGS < +0V
0V < VDS < +8V
For VDS < 2V
Forward or reverse current
Under any acceptable bias state
Under any acceptable bias state
Non-Operating Storage
See De-Rating Note below
Under any bias conditions
2 or more Max. Limits
A
BSOLUTE
M
AXIMUM
8V
-3V
IDSS
15mA
350mW
175°C
-55°C to 150°C
2.3W
5dB
Channel Operating Temperature
Storage Temperature
Total Power Dissipation
Gain Compression
Simultaneous Combination of Limits
Notes:
1
T
Ambient
= 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause
permanent damage to the device
2
Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3
Users should avoid exceeding 80% of 2 or more Limits simultaneously
4
Total Power Dissipation defined as: P
TOT
≡
(P
DC
+ P
IN
) – P
OUT
,
where P
DC
: DC Bias Power, P
IN
: RF Input Power, P
OUT
: RF Output Power
Total Power Dissipation to be de-rated as follows above 22°C:
P
TOT
= 2.3 - (0.016W/°C) x T
PACK
where T
PACK
= source tab lead temperature above 22°C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 65°C carrier temperature: P
TOT
= 2.3W – (0.016 x (65 – 22)) = 1.61W
B
IASING
G
UIDELINES
:
•
•
•
Active bias circuits provide good performance stabilization over variations of operating
temperature, but require a larger number of components compared to self-bias or dual-biased.
Such circuits should include provisions to ensure that Gate bias is applied before Drain bias.
Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage
supply for depletion-mode devices.
For standard class A operation, a 50% of IDSS bias point is recommended. A small amount of
RF gain expansion prior to the onset of compression is normal for this operating point. A class
A/B Bias of 25-33% of IDSS to achieve better OIP3, and Noise Figure performance is suggested.
2
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
