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FPD1500P100SOT89 参数 Datasheet PDF下载

FPD1500P100SOT89图片预览
型号: FPD1500P100SOT89
PDF下载: 下载PDF文件 查看货源
内容描述: [Transistor,]
分类和应用:
文件页数/大小: 3 页 / 183 K
品牌: FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
 浏览型号FPD1500P100SOT89的Datasheet PDF文件第1页浏览型号FPD1500P100SOT89的Datasheet PDF文件第3页  
1W P
ACKAGED
P
OWER P
HEMT
RECOMMENDED BIAS CONDITIONS:
Drain-Source Voltage:
5V to 8V
Drain-Source Current:
33% to 50% I
DSS
ABSOLUTE MAXIMUM RATINGS
1
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
RF Input Power
2
Channel Operating Temperature
Storage Temperature
Total Power Dissipation
Gain Compression
Simultaneous Combination of Limits
3
1
3
FPD1500P100
Symbol
V
DS
V
GS
I
DS
I
G
P
IN
T
CH
T
STG
P
TOT
Comp.
2
Test Conditions
-3V < V
GS
< +0V
0V < V
DS
< +8V
For V
DS
> 2V
Forward or reverse current
Under any acceptable bias state
Under any acceptable bias state
Non-Operating Storage
See De-Rating Note below
Under any bias conditions
2 or more Max. Limits
Min
Max
9
-3
I
DSS
15
350
175
Units
V
V
mA
mA
mW
ºC
ºC
W
dB
%
-40
150
3.2
5
80
Users should avoid exceeding 80% of 2 or more Limits simultaneously
T
Ambient
= 22°C unless otherwise noted
Max. RF Input Limit must be further limited if input VSWR > 2.5:1
Notes:
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.
Power Dissipation defined as: P
TOT
(P
DC
+ P
IN
) – P
OUT
, where
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
Absolute Maximum Power Dissipation to be de-rated as follows above 22°C:
P
TOT
= 3.2W – (0.021W/°C) x T
HS
where T
HS
= heatsink or ambient temperature above 22°C
Example: For a 85°C heatsink temperature: P
TOT
= 3.2W – (0.021 x (85 – 22)) = 1.88W
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 0 (< 250V) per JESD22-A114-B, Human Body
Model, and Class A (< 200V) per JESD22-A115-A, Machine Model.
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://www.filtronic.co.uk/semis
Released:
6/27/05
Email:
sales@filcsi.com