Preliminary Data Sheet
•
FEATURES
♦
29 dBm Output Power at 1-dB Compression
♦
17 dB Power Gain at 2 GHz
♦
1.0 dB Noise Figure at 2 GHz
♦
42 dBm Output IP3
♦
50% Power-Added Efficiency
FP2250QFN
P
ACKAGED
L
OW
N
OISE
, H
IGH
L
INEARITY
PHEMT
•
DESCRIPTION AND APPLICATIONS
The FP2250QFN is a high performance, leadless, encapsulated packaged Aluminum Gallium
Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility
Transistor (pHEMT). It utilizes a 0.25
µm
x 2250
µm
Schottky barrier gate, defined by electron-
beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source
and gate resistance. The epitaxial structure and processing have been optimized for reliable high-
power applications. The FP2250’s active areas are passivated with Si
3
N
4
, and the QFN package is
ideal for low-cost, high-performance applications that require a surface-mount package. Typical
applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN systems,
and other types of wireless infrastructure systems up to 10 GHz.
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25°C
Parameter
Saturated Drain-Source Current
FP2250QFN-1
FP2250QFN-2
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Noise Figure
Output Third-Order Intercept Point
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
All RF data tested at 2.0 GHz
Symbol
I
DSS
Test Conditions
V
DS
= 2 V; V
GS
= 0 V
560
706
27
16
635
770
29
17
50
1.0
42
705
850
mA
mA
dBm
dB
%
dB
dBm
mA
mS
µA
V
V
V
Min
Typ
Max
Units
•
P-1dB
G-1dB
PAE
NF
IP3
I
MAX
G
M
I
GSO
V
P
V
BDGS
V
BDGD
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5V; I
DS
= 50% I
DSS
V
DS
= 2 V; V
GS
= 1 V
V
DS
= 2 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 2 V; I
DS
= 11 mA
I
GS
= 11 mA
I
GD
= 11 mA
840
550
-2.0
-10
-10
115
-0.25
-12
-12
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
10/18/02
Email:
sales@filss.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
