FMA3051
12.5-15.5 GH
Z
MMIC H
IGH
P
OWER
A
MPLIFIER
F
EATURES
•
•
•
•
•
•
35 dB Gain
30 dBm P
1dB
Output Power at 6 V, 1.2 A
40 dBm OIP3
pHEMT Technology
On-chip output power detector
5 x 3 sq. mm die
Pilot Datasheet v2.1
F
UNCTIONAL
S
CHEMATIC
D1 D2 D3 D4
RF IN
G2 G3 G4
D1 D2 D3 D4
RF OUT
G
ENERAL
D
ESCRIPTION
The FMA3051 is a high performance
12.5-15.5 GHz Gallium Arsenide monolithic
amplifier. It is suitable for use in point-to-
multipoint communications, sat-com and
electronic warfare applications. The die is
fabricated using the Filtronic 0.25 µm process.
The balanced design offers high output power
with low return losses. Power detection is
achieved with an on-chip coupled detector
associated with diode reference voltage. The
circuit is DC blocked at both the RF input and
the RF output.
G2 G3 G4
DET
T
YPICAL
A
PPLICATIONS
•
•
•
•
Point-to-point radio
Point-to-multipoint radio
Sat-com
Electronic Warfare
E
LECTRICAL
S
PECIFICATIONS
P
ARAMETER
Small Signal Gain
Input Return Loss
Output Return
Loss
Output Power at
1dB compression
point
Output IP3
Drain Current
Typical gate
voltage
Note: T
AMBIENT
= +25°C, Z
0
= 50Ω
Performance for on-wafer measurements
C
ONDITIONS
12.5-15.5 GHz, Vd = 6 V, 1200 mA
12.5-15.5 GHz, Vd = 6 V, 1200 mA
12.5-15.5 GHz, Vd = 6 V, 1200 mA
12.5-15.5 GHz, Vd = 6 V, 1200 mA
M
IN
32
T
YP
35
-12
-15
M
AX
36
-10
-12
35
U
NITS
dB
dB
dB
dBm
30
33
12.5-15.5 GHz, Vd = 6 V, 1200 mA
6.0 V
800
-0.5
40
1100
-0.4
1400
-0.3
dBm
mA
V
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email:
sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
