Datasheet v3.0
TYPICAL FREQUENCY REPONSE:
N.F.min vs Frequency Biased @ 3.3V
MSG & S21 vs Frequency Biased @ 3.3V, 40mA
28
24
20
16
12
8
1.20
1.00
0.80
0.60
0.40
0.20
0.00
MSG
S21
ID = 80mA
ID = 40mA
4
0
0.5
1.5
2.5
3.5
4.5
5.5
6.5
7.5
8.5
9.5 10.5
Frequency (GHz)
Frequency (GHz)
NOTE: Typical Gain and Noise figure variation against frequency is shown above. The devices were
biased nominally at VDS = 3.3V, IDS = 40mA. The test devices were tuned for minimum noise figure and
maximum gain using tuners at the device input and output ports.
TYPICAL RF PERFORMANCE @ 1.85 GHZ:
Power Transfer Characteristic
Power Transfer Characteristic
VDS = 3.3V IDS = 40mA at f = 1.85GHz
VDS = 3.3V IDS = 80mA at f = 1.85GHz
23.0
21.0
19.0
17.0
15.0
13.0
11.0
9.0
7.00
23.0
21.0
19.0
17.0
15.0
13.0
11.0
9.0
7.00
6.00
5.00
4.00
3.00
2.00
1.00
0.00
-1.00
6.00
5.00
4.00
3.00
2.00
1.00
0.00
-1.00
Pout (dBm)
Comp Point
Pout (dBm)
Comp Point
7.0
7.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
Input Power (dBm)
Input Power (dBm)
NOTE: Typical power transfer curves at two bias conditions are shown above. The data is taken with the
device mounted on evaluation board tuned at 1.85GHz for low noise and gain as shown in the reference
design given on page 6.
3
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
