FPD750SOT343
Datasheet v3.0
T
YPICAL FREQUENCY REPONSE
:
MSG & S21 vs Frequency Biased @ 3.3V, 40mA
MSG
N.F.min vs Frequency Biased @ 3.3V
1.20
1.00
28
MSG (dB)
24
20
16
12
8
4
0
S21
N.F.min (dB)
0.80
0.60
0.40
0.20
0.6
1.2
1.8
2.4
3.0
3.6
4.2
4.8
Mag S21
&
ID = 80mA
ID = 40mA
5.4
0.5
1.5
2.5
3.5
4.5
5.5
6.5
7.5
8.5
9.5
10.5
Frequency (GHz)
Frequency (GHz)
NOTE: Typical Gain and Noise figure variation against frequency is shown above. The devices were
biased nominally at V
DS
= 3.3V, I
DS
= 40mA. The test devices were tuned for minimum noise figure and
maximum gain using tuners at the device input and output ports.
TYPICAL RF PERFORMANCE
@
Power Transfer Characteristic
VDS = 3.3V IDS = 40mA at
f
= 1.85GHz
23.0
21.0
19.0
Output Power (dBm)
Pout (dBm)
Comp Point
1.85 GH
Z
:
Power Transfer Characteristic
VDS = 3.3V IDS = 80mA at
f
= 1.85GHz
7.00
6.00
Gain Compression (dB)
23.0
21.0
19.0
Output Power (dBm)
Pout (dBm)
Comp Point
17.0
15.0
13.0
11.0
9.0
7.0
-10.0
4.00
3.00
2.00
1.00
0.00
-1.00
10.0
17.0
15.0
13.0
11.0
9.0
7.0
-10.0
4.00
3.00
2.00
1.00
0.00
-1.00
12.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
Input Power (dBm)
Input Power (dBm)
NOTE: Typical power transfer curves at two bias conditions are shown above. The data is taken with the
device mounted on evaluation board tuned at 1.85GHz for low noise and gain as shown in the reference
design given on page 6.
3
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
Gain Compression (dB)
5.00
6.0
7.00
6.00
5.00
0.00
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
