FPD200P70
H
IGH
F
REQUENCY
P
ACKAGED P
HEMT
F
EATURES
:
•
•
•
•
•
•
20 dBm Output Power (P
1dB
)
17 dB Gain at 5.8 GHz
0.7 dB Noise Figure at 5.8 GHz
30 dBm Output IP3
45% Power-Added Efficiency
Useable Gain to 26 GHz
Data sheet v3.0
P
ACKAGE
RoHS
G
ENERAL
D
ESCRIPTION
:
The FPD200P70 is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT). It
utilizes a 0.25 mm x 200 mm Schottky barrier
Gate, defined by high-resolution stepper-
based photolithography.
T
YPICAL
A
PPLICATIONS
:
•
•
LNAs and Driver Amplifiers to 26GHz
VCOs and Frequency Doublers
T
YPICAL
P
ERFORMANCE
:
RF P
ARAMETER
Power at 1dB Gain Compression
Small Signal Gain
Power-Added Efficiency
S
YMBOL
P1dB
SSG
PAE
C
ONDITIONS
VDS = 5 V; IDS = 30mA
VDS = 5 V; IDS = 30mA
VDS = 5 V; IDS = 30mA
POUT = P1dB
1.85GH
Z
20
21
45
5.8GH
Z
19
17
45
18GH
Z
20
9
45
U
NITS
dBm
dB
%
Maximum Stable Gain (|S21/S12|)
Minimum Noise Figure
Output Third-Order Intercept Point
POUT = 9 dBm per Tone
MSG
NFmin
IP3
VDS = 5 V; IDS = 30mA
VDS = 5 V; IDS = 30mA
VDS = 5V; IDS = 30mA
VDS = 8V; IDS = 30mA
24
0.3
29
31
21
0.7
28
30
14
2.2
28.5
31
dB
dBm
E
LECTRICAL
S
PECIFICATIONS
:
DC P
ARAMETER
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
S
YMBOL
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
θJC
C
ONDITIONS
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS
≅
+1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 0.2 mA
IGS = 0.2 mA
IGD = 0.2 mA
VDS > 3V
M
IN
45
T
YP
60
120
80
1
M
AX
75
U
NITS
mA
mA
mS
10
1.3
µA
V
V
V
°C/W
0.7
12
14.5
0.9
14
16
325
Note: T
AMBIENT
= 22°
1
Tel: +44 (0) 1325 301111
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website:
www.filtronic.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
