FPD1500DFN
Datasheet v2.1
TYPICAL I-V CHARACTERISTICS:
DC IV Curves FPD750SOT89
Note: The recommended method for measuring
IDSS, or any particular IDS, is to set the Drain-Source
voltage (VDS) at 1.3V. This measurement point
avoids the onset of spurious self-oscillation which
would normally distort the current measurement
(this effect has been filtered from the I-V curves
presented above). Setting the VDS > 1.3V will
0.30
0.25
0.20
0.15
0.10
0.05
0.00
VG=-1.50
VG=-1.25V
VG=-1.00V
VG=-0.75V
VG=-0.50V
VG=-0.25V
VG=0V
generally
cause
errors
in
the
current
measurements, even in stabilized circuits.
Recommendation: Traditionally a device’s IDSS
rating (IDS at VGS = 0V) was used as a predictor of
RF power, and for MESFETs there is a correlation
between IDSS and P1dB (power at 1dB gain
compression). For pHEMTs it can be shown that
there is no meaningful statistical correlation
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Drain-Source Voltage (V)
between IDSS and P1dB
regression analysis shows r2 < 0.7, and the
regression fails the F-statistic test. IDSS is
; specifically a linear
sometimes useful as a guide to circuit tuning, since
the S22 does vary with the quiescent operating
point IDS
.
5
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
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