ZTX749
PNP Low Saturation Transistor
•
This device are designed with high current gain and low saturation
voltage with collector currents up to 2A continuous.
C
TO-226
B
E
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Symbol
Parameter
Value
-25
-35
-5
Units
V
V
V
V
Collector-Emitter Voltage
CEO
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
V
CBO
EBO
V
I
- Continuous
-2
A
C
T , T
Operating and Storage Junction Temperature Range
-55 ~ +150
°C
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T =25°C unless otherwise noted
A
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
BV
BV
BV
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
I
I
I
= -10mA
-25
-35
-5
V
V
V
CEO
CBO
EBO
C
C
E
= -100µA
= -100µA
I
V
V
= -30V
= -30V, T = 100°C
-100
-10
nA
µA
CBO
CB
CB
A
I
Emitter Cutoff Current
V
= -4V
-100
nA
EBO
EB
On Characteristics*
h
DC Current Gain
I
I
I
I
= -50mA, V = -2V
70
100
75
FE
C
C
C
C
CE
= -1A, V = -2V
300
CE
= -2A, V = -2V
CE
= -6A, V = -2V
15
CE
V
(sat)
Collector-Emitter Saturation Voltage
I
I
= -1A, I = -100mA
-300
-500
mV
CE
C
C
B
= -2A, I = -200mA
B
V
V
(sat)
(on)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
I
I
= -1A, I = -100mA
-1.25
-1
V
V
BE
C
C
B
= -1A, V = -2V
BE
CE
Small-Signal Characteristics
C
Output Capacitance
Transition Frequency
V
= -10V, I = 0, f = 1MHz
100
PF
obo
CB
E
f
I
= 1-00mA, V = -5V
100
T
C
CE
f = 100MHz
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
Thermal Characteristics T =25°C unless otherwise noted
A
Symbol
Parameter
Max.
1
Units
P
Total Device Dissipation
Thermal Resistance, Junction to Ambient
W
D
R
125
°C/W
θJA
©2003 Fairchild Semiconductor Corporation
Rev. A, August 2003
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
