NPN Darlington Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
50
60
12
V
V
BVCES
BVCBO
BVEBO
ICBO
IC = 1 mA
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IC = 100 mA
IE = 10 mA
VCB = 40 V
VEB = 10 V
V
100
100
nA
nA
Emitter Cutoff Current
IEBO
ON CHARACTERISTICS*
DC Current Gain
hFE
25,000
15,000
-
IC = 200 mA, VCE = 5 V
IC = 500 mA, VCE = 5 V
IC = 1A, VCE = 5 V
4000 40,000
Collector-Emitter Saturation Voltage
1.0
1.5
V
VCE(sat)
IC = 200 mA, IB = 2 mA
IC = 1 A, IB = 2 mA
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
2
2
V
V
VBE(sat)
VBE(on)
IC = 1 A, IB = 2 mA
IC = 1 A, VCE = 5.0 V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Ccb
10
pF
-
VCB = 10 V, IE = 0, f = 1MHz
Small Signal Current Gain
hfe
1
10
IC = 200 mA,VCE = 5 V, f=100MHz
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 1.0%
Ó 1997 Fairchild Semiconductor Corporation
TN6725A, Rev A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
