TIP42 SERIES(TIP42/42A/42B/42C)
TIP42 SERIES(TIP42/42A/42B/42C)
Medium Power Linear Switching Applications
• Complement to TIP41/41A/41B/41C
1
TO-220
2.Collector
3.Emitter
1.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Parameter
: TIP42
: TIP42A
: TIP42B
: TIP42C
Value
- 40
- 60
- 80
- 100
- 40
- 60
- 80
- 100
-5
-6
-10
-2
65
2
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
V
CEO
Collector-Emitter Voltage : TIP42
: TIP42A
: TIP42B
: TIP42C
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction Temperature
Storage Temperature
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: TIP42
: TIP42A
: TIP42B
: TIP42C
Collector Cut-off Current
: TIP42/42A
: TIP42B/42C
Collector Cut-off Current
: TIP42
: TIP42A
: TIP42B
: TIP42C
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
V
CE
= -40V, V
EB
= 0
V
CE
= -60V, V
EB
= 0
V
CE
= -80V, V
EB
= 0
V
CE
= -100V, V
EB
= 0
V
EB
= -5V, I
C
= 0
V
CE
= -4V, I
C
= -0.3A
V
CE
= -4V, I
C
= -3A
I
C
= -6A, I
B
= -600mA
V
CE
= -4V, I
C
= -6A
V
CE
= -10V, I
C
= -500mA
3.0
30
15
-400
-400
-400
-400
-1
75
-1.5
-2.0
V
V
MHz
Rev. A, February 2000
Test Condition
I
C
= -30mA, I
B
= 0
Min.
-40
-60
-80
-100
Max.
Units
V
V
V
V
I
CEO
V
CE
= -30V, I
B
= 0
V
CE
= -60V, I
B
= 0
-0.7
-0.7
mA
mA
µA
µA
µA
µA
mA
I
CES
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2000 Fairchild Semiconductor International
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
