TIP32/TIP32A/TIP32B/TIP32C — PNP Epitaxial Silicon Transistor
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: TIP32
: TIP32A
: TIP32B
: TIP32C
Collector Cut-off Current
: TIP32/32A
: TIP32B/32C
Collector Cut-off Current
: TIP32
: TIP32A
: TIP32B
: TIP32C
I
EBO
h
FE
Emitter Cut-off Current
* DC Current Gain
V
CE
= - 40V, V
EB
= 0
V
CE
= - 60V, V
EB
= 0
V
CE
= - 80V, V
EB
= 0
V
CE
= - 100V, V
CE
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 4V, I
C
= - 1A
V
CE
= - 4V, I
C
= - 3A
I
C
= - 3A, I
B
= - 375mA
V
CE
= - 4V, I
C
= - 3A
V
CE
= - 10V, I
C
= - 500mA, f = 1MHz
3.0
25
10
- 200
- 200
- 200
- 200
-1
μA
μA
μA
μA
mA
Test Condition
Min.
Max.
Units
I
C
= - 30mA, I
B
= 0
-40
-60
-80
-100
V
V
V
V
I
CEO
V
CE
= - 30V, I
B
= 0
V
CE
= - 60V, I
B
= 0
- 0.3
- 0.3
mA
mA
I
CES
50
- 1.2
- 1.8
V
V
MHz
V
CE
(sat)
V
BE
(sat)
f
T
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
* Pulse Test: PW≤300ms, Duty Cycle≤2%
© 2008 Fairchild Semiconductor Corporation
TIP32/TIP32A/TIP32B/TIP32C Rev. A
www.fairchildsemi.com
2
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