TIP145/146/147
TIP145/146/147
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
• High DC Current Gain : h
FE
= 1000 @ V
CE
= -4V, I
C
= -5A (Min.)
• Industrial Use
• Complement to TIP140/141/142
1
TO-3P
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Parameter
Collector-Base Voltage
: TIP145
: TIP146
: TIP147
Value
- 60
- 80
- 100
- 60
- 80
- 100
-5
- 10
- 15
- 0.5
125
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
°C
°C
1.Base 2.Collector 3.Emitter
Equivalent Circuit
C
B
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Emitter Voltage : TIP145
: TIP146
: TIP147
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
R1
R2
E
R1
≅
8kΩ
R2
≅
0.12kΩ
Electrical Characteristics
T
C
=25°C
unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
Collector-Emitter Sustaining Voltage
: TIP145
: TIP146
: TIP147
Collector Cut-off Curren
: TIP145
: TIP146
: TIP147
I
CBO
Collector Cut-off Current
: TIP145
: TIP146
: TIP147
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
t
D
t
R
t
STG
t
F
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter ON Voltage
Delay Time
Rise Time
Storage Time
Fall Time
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
CB
= - 100V, I
E
= 0
V
BE
= - 5V, I
C
= 0
V
CE
= - 4V,I
C
= - 5A
V
CE
= - 4V, I
C
= - 10A
I
C
= - 5A, I
B
= - 10mA
I
C
= - 10A, I
B
= - 40mA
I
C
= - 10A, I
B
= - 40mA
V
CE
= - 4V, I
C
= - 10A
V
CC
= - 30V, I
C
= - 5A
I
B1
= -20mA, I
B2
= 20mA
R
L
= 6Ω
0.15
0.55
2.5
2.5
1000
500
-2
-3
- 3.5
-3
V
V
V
V
µs
µs
µs
µs
Rev. A, February 2000
Test Condition
I
C
= - 30mA, I
B
= 0
Min.
- 60
- 80
- 100
Typ.
Max.
Units
V
V
V
I
CEO
V
CE
= - 30V, I
B
= 0
V
CE
= - 40V, I
B
= 0
V
CE
= - 50V, I
B
= 0
-2
-2
-2
-1
-1
-1
-2
mA
mA
mA
mA
mA
mA
mA
©2000 Fairchild Semiconductor International
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
