TIP110/111/112
TIP110/111/112
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
•
•
•
•
Complementary to TIP115/116/117
High DC Current Gain : h
FE
=1000 @ V
CE
=4V, I
C
=1A(Min.)
Low Collector-Emitter Saturation Voltage
Industrial Use
1
TO-220
2.Collector
3.Emitter
1.Base
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Parameter
Collector-Base Voltage
: TIP110
: TIP111
: TIP112
Value
60
80
100
60
80
100
5
2
4
50
2
50
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
mA
W
W
°C
°C
R1
R2
E
B
Equivalent Circuit
C
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Emitter Voltage : TIP110
: TIP111
: TIP112
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
a
=25°C)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
R
1
≅
10
k
Ω
R
2
≅
0.6
k
Ω
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
Collector-Emitter Sustaining Voltage
: TIP110
: TIP111
: TIP112
Collector Cut-off Current
: TIP110
: TIP111
: TIP112
I
CBO
Collector Cut-off Current
: TIP110
: TIP111
: TIP112
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
C
ob
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Output Capacitance
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
V
BE
= 5V, I
C
= 0
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 2A
I
C
= 2A, I
B
= 8mA
V
CE
= 4V, I
C
= 2A
V
CB
= 10V, I
E
= 0, f = 0.1MHz
1000
500
2.5
2.8
100
V
V
pF
1
1
1
2
mA
mA
mA
mA
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
CE
= 50V, I
B
= 0
2
2
2
mA
mA
mA
Test Condition
I
C
= 30mA, I
B
= 0
Min.
60
80
100
Max.
Units
V
V
V
I
CEO
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
