欢迎访问ic37.com |
会员登录 免费注册
发布采购

TIP107 参数 Datasheet PDF下载

TIP107图片预览
型号: TIP107
PDF下载: 下载PDF文件 查看货源
内容描述: 整体结构与内置的基线发射器分流电阻器 [Monolithic Construction With Built In Base- Emitter Shunt Resistors]
分类和应用: 晶体电阻器晶体管局域网
文件页数/大小: 4 页 / 53 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
 浏览型号TIP107的Datasheet PDF文件第2页浏览型号TIP107的Datasheet PDF文件第3页浏览型号TIP107的Datasheet PDF文件第4页  
TIP105/106/107
TIP105/106/107
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
High DC Current Gain : h
FE
=1000 @ V
CE
= -4V, I
C
= -3A (Min.)
Collector-Emitter Sustaining Voltage
Low Collector-Emitter Saturation Voltage
Industrial Use
Complementary to TIP100/101/102
1
TO-220
2.Collector
3.Emitter
1.Base
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Parameter
Collector-Base Voltage
: TIP105
: TIP106
: TIP107
Value
- 60
- 80
- 100
- 60
- 80
- 100
-5
-8
- 15
-1
2
80
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
R1
R2
E
Equivalent Circuit
C
B
V
CEO
Collector-Emitter Voltage : TIP105
: TIP106
: TIP107
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
a
=25°C)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
R
1
10
k
R
2
0.6
k
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
Collector-Emitter Sustaining Voltage
: TIP105
: TIP106
: TIP107
Collector Cut-off Current
: TIP105
: TIP106
: TIP107
I
CBO
Collector Cut-off Current
: TIP105
: TIP106
: TIP107
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
C
ob
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Output Capacitance
V
CB
= -60V, I
E
= 0
V
CB
= -80V, I
E
= 0
V
CB
= -100V, I
E
= 0
V
BE
= -5V, I
C
= 0
V
CE
= -4V, I
C
= -3A
V
CE
= -4V, I
C
= -8A
I
C
= -3A, I
B
= -6mA
I
C
= -8A, I
B
= -80mA
V
CE
= -4V, I
C
= -8A
V
CB
= -10V, I
E
= 0, f = 0.1MHz
1000
200
-50
-50
-50
-2
20000
-2
-2.5
-2.8
300
V
V
V
pF
µA
µA
µA
mA
V
CE
= -30V, I
B
= 0
V
CE
= -40V, I
B
= 0
V
CE
= -50V, I
B
= 0
-50
-50
-50
µA
µA
µA
Test Condition
I
C
= -30mA, I
B
= 0
Min.
-60
-80
-100
Max.
Units
V
V
V
I
CEO
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001