SGH40N60UFD
3000
15
Common Emitter
R
L
= 15
Ω
T
C
= 25℃
Gate - Emitter Voltage, V
GE
[ V ]
1000
12
Switching Loss [uJ]
9
300 V
6
V
CC
= 100 V
3
200 V
Eoff
Eon
100
Eoff
Eon
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 10
Ω
T
C
= 25℃
T
C
= 125℃
15
20
25
30
35
40
10
10
0
0
30
60
90
120
Collector Current, I
C
[A]
Gate Charge, Q
g
[ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
500
I
C
MAX. (Pulsed)
100
500
100
100us
1㎳
Collector Current, I
C
[A]
I
C
MAX. (Continuous)
10
DC Operation
1
Single Nonrepetitive
Pulse T
C
= 25℃
Curves must be derated
linearly with increase
in temperature
0.3
1
10
Collector Current, I
C
[A]
50us
10
1
Safe Operating Area
V
GE
=20V, T
C
=100 C
100
1000
0.1
1
10
100
1000
o
0.1
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
1
0.5
Thermal Response, Zthjc [
℃
/W]
0.2
0.1
0.1
0.05
0.02
0.01
0.01
single pulse
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
1E-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGH40N60UFD Rev. A1