RHRP840, RHRP860
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
RHRP840
SYMBOL
V
F
I
F
= 8A
I
F
= 8A, T
C
= 150
o
C
I
R
V
R
= 400V
V
R
= 600V
V
R
= 400V, T
C
= 150
o
C
V
R
= 600V, T
C
= 150
o
C
t
rr
I
F
= 1A, dI
F
/dt = 200A/
µ
s
I
F
= 8A, dI
F
/dt = 200A/
µ
s
t
a
t
b
Q
RR
C
J
R
θ
JC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
CJ = Junction capacitance.
R
θ
JC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
I
F
= 8A, dI
F
/dt = 200A/
µ
s
I
F
= 8A, dI
F
/dt = 200A/
µ
s
I
F
= 8A, dI
F
/dt = 200A/
µ
s
V
R
= 10V, I
F
= 0A
TEST CONDITION
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
18
10
56
25
-
MAX
2.1
1.7
100
-
500
-
30
35
-
-
-
-
2
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
RHRP860
TYP
-
-
-
-
-
-
-
-
18
10
56
25
-
MAX
2.1
1.7
-
100
-
500
30
35
-
-
-
-
2
UNITS
V
V
µ
A
µ
A
µ
A
µ
A
ns
ns
ns
ns
nC
pF
o
C/W
Typical Performance Curves
40
1000
175
o
C
I
R
, REVERSE CURRENT (µA)
I
F
, FORWARD CURRENT (A)
100
10
10
100
o
C
175
o
C
100
o
C
25
o
C
1
1
0.5
0.1
25
o
C
0.01
0
0.5
1
1.5
2
2.5
3
0
100
200
300
400
500
600
V
F
, FORWARD VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
©2002 Fairchild Semiconductor Corporation
RHRP840, RHRP860 Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
