MPSA42 / MMBTA42 / PZTA42
NPN High Voltage Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 100
µA,
I
E
= 0
I
E
= 100
µA,
I
C
= 0
V
CB
= 200 V, I
E
= 0
V
EB
= 6.0 V, I
C
= 0
300
300
6.0
0.1
0.1
V
V
V
µA
µA
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 30 mA, V
CE
= 10 V
I
C
= 20 mA, I
B
= 2.0 mA
I
C
= 20 mA, I
B
= 2.0 mA
25
40
40
0.5
0.9
V
V
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
Current Gain - Bandwidth Product
Collector-Base Capacitance
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
V
CB
= 20 V, I
E
= 0, f = 1.0 MHz
50
3.0
MHz
pF
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
Spice Model
NPN (Is=34.9f Xti=3 Eg=1.11 Vaf=100 Bf=2.65K Ne=1.708 Ise=16.32p Ikf=23.79m Xtb=1.5 Br=9.769 Nc=2
Isc=0 Ikr=0 Rc=7 Cjc=14.23p Mjc=.5489 Vjc=.75 Fc=.5 Cje=49.62p Mje=.4136 Vje=.75 Tr=934.3p Tf=1.69n
Itf=5 Vtf=20 Xtf=150 Rb=10)
Typical Characteristics
DC Current Gain
vs Collector Current
h
FE
- DC CURRENT GAIN
140
120
100
25 °C
125 °C
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25
0.2
125 °C
β
= 10
80
60
40
20
0.1
I
C
- 40 ºC
0.15
25 °C
0.1
0.05
0.1
- 40 ºC
V
CE
= 5V
1
10
- COLLECTOR CURRENT (mA)
100
1
10
I
C
- COLLECTOR CURRENT (mA)
P
100
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
