NPN High Voltage Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0
300
300
6.0
V
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
I = 100 A, I = 0
µ
C
E
I = 100 A, I = 0
µ
E
C
VCB = 200 V, IE = 0
VEB = 6.0 V, IC = 0
0.1
0.1
A
A
µ
µ
IEBO
Emitter-Cutoff Current
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
IC = 20 mA, IB = 2.0 mA
25
40
40
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.5
0.9
V
VCE(sat)
VBE(sat)
IC = 20 mA, IB = 2.0 mA
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
f = 100 MHz
VCB = 20 V, IE = 0, f = 1.0 MHz
50
MHz
pF
Collector-Base Capacitance
3.0
Ccb
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=34.9f Xti=3 Eg=1.11 Vaf=100 Bf=2.65K Ne=1.708 Ise=16.32p Ikf=23.79m Xtb=1.5 Br=9.769 Nc=2
Isc=0 Ikr=0 Rc=7 Cjc=14.23p Mjc=.5489 Vjc=.75 Fc=.5 Cje=49.62p Mje=.4136 Vje=.75 Tr=934.3p Tf=1.69n
Itf=5 Vtf=20 Xtf=150 Rb=10)
Typical Characteristics
DC Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25
0.2
140
120
100
80
β
= 10
125 °C
25 °C
125 °C
0.15
0.1
60
25 °C
- 40 ºC
40
- 40 ºC
VCE= 5V
0.05
20
0.1
1
10
100
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
