PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage
IC = 10 mA, IB = 0
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCB = 40 V, IE = 0
VEB = 5.0 V, IC = 0
30
40
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
5.0
V
0.1
0.1
µA
µA
IEBO
Emitter-Cutoff Current
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 100 mA, VCE = 1.0 V
IC = 1.0 A, VCE = 1.0 V
IC = 1.0 A, IB = 100 mA
60
50
250
0.5
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
V
V
VCE(sat)
VBE(on)
IC = 1.0 A, VCE = 1.0 V
1.2
SMALL SIGNAL CHARACTERISTICS
Small-Signal Current Gain
IC = 50 mA, VCE = 10 V,
f = 20 MHz
VCB = 10 V, IE = 0, f = 1.0 MHz
2.5
25
30
hfe
Collector-Base Capacitance
pF
Ccb
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
DC Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
300
1
0.8
0.6
0.4
0.2
VCE = 5V
β
= 10
250
125 °C
200
25 °C
25 °C
150
100
- 40 ºC
- 40 ºC
125 °C
50
0
0.01
0
0.01
0.1
1
3
0.1
1
2
I C - COLLECTOR CURRENT (A)
I C - COLLECTOR CURRENT (A)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
