Typical Electrical Characteristics
25
I
D
, DRAIN-SOURCE CURRENT (A)
2
6.0V
4.5V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
20
5.0V
1.8
V
GS
= 4.0V
1.6
1.4
1.2
1
0.8
15
4.5V
5.0V
6.0V
8.0V
10V
4.0V
10
3.5V
5
3.0V
0
0
1
2
3
4
5
0
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
10
15
I
D
, DRAIN CURRENT (A)
20
25
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
DRAIN-SOURCE ON-RESISTANCE
1.6
1.4
1.2
1
0.8
0.6
-50
R
DS(ON)
, ON-RESISTANCE (OHM)
0.28
I
D
= 4.0 A
V
GS
= 10 V
I
D
= 2A
0.24
0.2
0.16
R
DS(ON)
, NORMALIZED
T
A
= 125°C
0.12
0.08
25°C
0.04
0
-25
0
25
50
75
100
125
150
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE (°C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Gate-to- Source Voltage.
10
I
S
, REVERSE DRAIN CURRENT (A)
30
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
8
TJ = -55°C
25°C
125°C
10 V
GS
= 0V
1
TA = 125°C
25°C
-55°C
6
0.1
0.01
4
2
0.001
0.0001
0
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Current and
Temperature.
NDT3055L Rev.A1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
