欢迎访问ic37.com |
会员登录 免费注册
发布采购

NDS9410A 参数 Datasheet PDF下载

NDS9410A图片预览
型号: NDS9410A
PDF下载: 下载PDF文件 查看货源
内容描述: 单N沟道增强型场效应晶体管 [Single N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体小信号场效应晶体管开关光电二极管
文件页数/大小: 8 页 / 232 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
 浏览型号NDS9410A的Datasheet PDF文件第2页浏览型号NDS9410A的Datasheet PDF文件第3页浏览型号NDS9410A的Datasheet PDF文件第4页浏览型号NDS9410A的Datasheet PDF文件第5页浏览型号NDS9410A的Datasheet PDF文件第6页浏览型号NDS9410A的Datasheet PDF文件第7页浏览型号NDS9410A的Datasheet PDF文件第8页  
NDS9410A
April 2000
NDS9410A
Single N-Channel Enhancement Mode Field Effect Transistor
General Description
This N-Channel Logic Level MOSFET is produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
fast switching, low in-line power loss and resistance to
transients are needed.
Features
7.3 A, 30 V.
R
DS(ON)
= 28 mΩ @ V
GS
= 10 V
R
DS(ON)
= 42 mΩ @ V
GS
= 4.5 V
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability in a
widely used surface mount package.
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
±20
(Note 1a)
Units
V
V
A
W
7.3
20
2.5
1.2
1.0
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
NDS9410A
Device
NDS9410A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
2000
Fairchild Semiconductor Corporation
NDS9410A Rev B(W)