NDS9410A
April 2000
NDS9410A
Single N-Channel Enhancement Mode Field Effect Transistor
General Description
This N-Channel Logic Level MOSFET is produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
fast switching, low in-line power loss and resistance to
transients are needed.
Features
•
7.3 A, 30 V.
R
DS(ON)
= 28 mΩ @ V
GS
= 10 V
R
DS(ON)
= 42 mΩ @ V
GS
= 4.5 V
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability in a
widely used surface mount package.
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
±20
(Note 1a)
Units
V
V
A
W
7.3
20
2.5
1.2
1.0
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
NDS9410A
Device
NDS9410A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
2000
Fairchild Semiconductor Corporation
NDS9410A Rev B(W)