Typical Electrical Characteristics
25
V
GS
=10V
3
6.0 5.0
4.5
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 3.0V
4.0
R
DS(ON)
, NORMALIZED
I
D
, DRAIN-SOURCE CURRENT (A)
20
2.5
3.5
4.0
4.5
15
2
3.5
10
1.5
5.0
6.0
10
5
3.0
1
0
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
2.5
3
0.5
0
5
10
15
I
D
, DRAIN CURRENT (A)
20
25
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
1.6
2
DRAIN-SOURCE ON-RESISTANCE
I
D
= 5.3A
1.4
V
GS
= 10V
DRAIN-SOURCE ON-RESISTANCE
1.75
R
DS(ON)
, NORMALIZED
V
G S
=10V
R
DS(ON)
, NORMALIZED
1.5
1.2
TJ = 125°C
1.25
1
25°C
1
0.8
-55°C
0.75
0.6
-50
-25
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
J
125
150
0.5
0
5
10
15
I
D
, DRAIN CURRENT (A)
20
25
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
25
1.2
125°C
V
th
, NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE
V
DS
= 10V
20
I
D
, DRAIN CURRENT (A)
TJ = -55°C
25°C
1.1
V
DS
= V
GS
I
D
= 250µA
1
15
0.9
10
0.8
5
0.7
0
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
6
0.6
-50
-25
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
J
125
150
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with
Temperature.
NDS8936 Rev. G
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
