Typical Electrical Characteristics
(continued)
BV
DSS
, NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.075
1.05
-I
S
, REVERSE DRAIN CURRENT (A)
I
D
= -250µA
20
10
V
GS
= 0V
1
TJ = 125°C
0.1
1.025
25°C
-55°C
1
0.01
0.975
0.001
0.95
-50
0.0001
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
0
0.2
0.4
0.6
0.8
1
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 7. Breakdown Voltage
Variation with Temperature.
Figure 8. Body Diode Forward Voltage Variation with
Source Current and Temperature
.
6000
4000
3000
CAPACITANCE (pF)
2000
5
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -7.9A
4
V
DS
= -5V
-15V
-10V
Ciss
Coss
3
1000
2
500
f = 1 MHz
V
GS
= 0 V
150
0 .1
0 .2
Crss
1
0 .5
1
2
5
-V
, DRAIN TO SOURCE VOLTAGE (V)
DS
10
20
0
0
10
Q
g
20
, GATE CHARGE (nC)
30
40
Figure 9. Capacitance Characteristics
.
Figure 10. Gate Charge Characteristics.
-V
DD
V
IN
D
t
on
t
d(on)
t
r
90%
t
off
t
d(off)
90%
t
f
R
L
V
OUT
DUT
V
GS
V
OUT
10%
R
GEN
10%
90%
G
V
IN
S
10%
50%
50%
PULSE WIDTH
INVERTED
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms
.
NDS8434A Rev.D
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
