Typical Electrical Characteristics
(continued)
1.12
5
DRAIN-SOURCE BREAKDOWN VOLTAGE
I , REVERSE DRAIN CURRENT (A)
I
D
= 250µA
1.08
V
GS
= 0V
1
BV
DSS
, NORMALIZED
TJ = 125°C
0.1
25°C
-55°C
1.04
1
0.01
0.96
0.001
0.92
-50
S
-25
0
T
J
25
50
75
100
125
150
0.0001
0
0.2
0.4
0.6
0.8
1
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.2
, JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature
.
Figure 8. Body Diode Forward Voltage Variation with
Source Current and Temperature
.
400
, GATE-SOURCE VOLTAGE (V)
300
CAPACITANCE (pF)
10
I
D
= 1.2A
8
V
DS
= 5V
10V
15V
200
150
6
C iss
100
80
4
C oss
f = 1 MHz
V
GS
= 0V
C rss
50
0.1
V
0.2
V
0.5
DS
GS
2
1
2
5
10
20
30
0
0
1
, DRAIN TO SOURCE VOLTAGE (V)
2
Q
g
, GATE CHARGE (nC)
3
4
Figure 9. Capacitance Characteristics
.
Figure 10. Gate Charge Characteristics
.
V
DD
t
d(on)
t
on
t
off
t
r
90%
t
d(off)
90%
t
f
V
IN
D
R
L
V
OUT
V
OUT
10%
V
GS
R
GEN
10%
INVERTED
G
DUT
90%
S
V
IN
10%
50%
50%
PULSE WIDTH
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms
.
NDS351AN Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
