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NDS351AN-OLDDIE 参数 Datasheet PDF下载

NDS351AN-OLDDIE图片预览
型号: NDS351AN-OLDDIE
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 6 页 / 79 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
I
SM
V
SD
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
guaranteed by design while R
θ
CA
is determined by the user's board design.
the drain pins. R
θ
JC
is
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.2 A
(Note 2)
0.8
0.42
5
1.2
A
A
V
P
D
(
t
) =
R
θ
JA
(
t
)
T
J
T
A
=
T
J
T
A
R
θ
JC
+
R
θ
CA
(
t
)
=
I
2
(
t
) ×
R
DS
(
ON
)
D
T
J
Typical R
θ
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 250
o
C/W when mounted on a 0.02 in
2
pad of 2oz copper.
b. 270
o
C/W when mounted on a 0.001 in
2
pad of 2oz copper.
1a
1b
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDS351AN Rev. C