NDS351AN
June 2003
NDS351AN
N-Channel, Logic Level, PowerTrench
®
MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are particularly suited for low voltage
applications in notebook computers, portable phones,
PCMCIA cards, and other battery powered circuits
where fast switching, and low in-line power loss are
needed in a very small outline surface mount package.
Features
•
1.4 A, 30 V.
R
DS(ON)
= 160 mΩ @ V
GS
= 10 V
R
DS(ON)
= 250 mΩ @ V
GS
= 4.5 V
•
Ultra-Low gate charge
•
Industry standard outline SOT-23 surface mount
package using proprietary SuperSOT
TM
-3 design for
superior thermal and electrical capabilities
•
High performance trench technology for extremely
low R
DS(ON)
D
D
S
G
S
SuperSOT -3
TM
G
T
A
=25
o
C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Parameter
Ratings
30
±
20
(Note 1a)
Units
V
V
A
W
°C
1.4
10
0.5
0.46
–55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°C/W
Package Marking and Ordering Information
Device Marking
351A
Device
NDS351AN
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
©2003
Fairchild Semiconductor Corporation
NDS351AN Rev E(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
