ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= -10 µA
V
DS
= -48 V, V
GS
= 0 V
T
J
= 125°C
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= -1 mA
T
J
= 125°C
V
GS
= -10 V, I
D
= -0.5 A
T
J
= 125°C
V
GS
= -4.5 V, I
D
= -0.25 A
T
J
= 125°C
-60
-1
-200
10
-10
V
µA
µA
nA
nA
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
-1
-0.6
-2.4
-2.1
3.6
5.9
5.2
7.9
-3.5
-3.2
10
16
20
30
V
Static Drain-Source On-Resistance
Ω
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= -10 V, V
DS
= -10 V
V
GS
= -4.5 V, V
DS
= -10 V
V
DS
= -10 V, I
D
= -0.1 A
V
DS
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
-0.6
70
-1.6
-0.35
170
40
11
3.2
60
25
5
A
mS
pF
pF
pF
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
I
S
I
SM
V
SD
SWITCHING CHARACTERISTICS
(Note 1)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Source Current
Maximum Pulse Source Current
(Note 1)
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Current
V
DD
= -25 V, I
D
= -0.18 A,
V
GS
= -10 V, R
GEN
= 25
Ω
7
5
13
10
10
15
15
20
nS
nS
nS
nS
nC
nC
nC
V
DS
= -48 V,
I
D
= -0.5 A, V
GS
= -10 V
1.43
0.6
0.25
-0.18
-1
DRAIN-SOURCE DIODE CHARACTERISTICS
A
A
V
ns
A
V
GS
= 0 V, I
S
= -0.5 A
(Note 1)
-1.2
T
J
= 125°C
-0.98
40
2.8
-1.5
-1.3
t
rr
I
rr
V
GS
= 0 V, I
S
= -0.5 A,
dI
F
/dt = 100 A/µs
Note:
1. Pulse Test: Pulse Width < 300
µ
s, Duty Cycle < 2.0%.
NDS0610.SAM
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
