6-PIN DIP OPTOCOUPLERS FOR
POWER SUPPLY APPLICATIONS
(NO BASE CONNECTION)
MOC8101
MOC8105
CNY17F-1
MOC8102
MOC8106
CNY17F-2
MOC8103
MOC8107
CNY17F-3
MOC8104
MOC8108
CNY17F-4
(1)
ELECTRICAL CHARACTERISTICS (T =25°C Unless otherwise specified)
A
Characteristic
Symbol
Min
Typ**
Max
Unit
INPUT LED
Forward Voltage
(I = 60 mA)
CNY17F-X
MOC810X
V
—
1.0
—
1.40
1.18
0.001
18
1.65
1.5
10
V
F
F
(I = 10 mA)
F
Reverse Leakage Current (V = 5.0 V)
I
µA
pF
R
R
Capacitance
C
—
—
OUTPUT TRANSISTOR
Collector-Emitter Dark Current
(V = 10 V, T = 25°C)
I
I
—
—
1.0
1.0
50
—
nA
µA
CE
A
CEO1
(V = 10 V, T = 100°C)
CE
A
CEO2
Collector-Emitter Breakdown Voltage
MOC8101/2/3/4/5
(I = 1.0 mA)
30
70
7.0
—
100
100
10
—
—
—
—
C
V
V
V
(BR) CEO
MOC8106/7/8, CNY17F-1/2/3/4
Emitter-Collector Breakdown Voltage
Collector-Emitter Capacitance
COUPLED
(I = 1.0 mA)
C
(I = 100 µA)
V
E
(BR) ECO
(f = 1.0 MHz, V = 0)
C
8
pF
CE
CE
MOC8101
MOC8102
MOC8103
MOC8104
MOC8105
MOC8106
MOC8107
MOC8108
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
50
73
—
—
—
—
—
—
—
—
—
—
—
—
80
117
173
256
133
150
300
600
80
108
160
65
Output Collector Current
(I = 10 mA, V = 10 V)
F
CE
50
(2)
(CTR)
%
100
250
40
63
125
200
320
(I = 10 mA, V = 5 V)
F
CE
100
160
Collector-Emitter Saturation Voltage
CNY17F-1/2/3/4
(I = 2.5 mA, I = 10 mA)
C
F
V
—
—
0.4
V
CE(sat)
MOC8101/2/3/4/5/6/7/8
Isolation Voltage
(I = 500 µA, I = 5.0 mA)
C F
(4)
(f = 60 Hz, t = 1.0 min.)
V
R
C
5300
—
—
—
—
—
Vac(rms)
ISO
ISO
ISO
(4)
11
Isolation Resistance
(V = 500 V)
10
Ω
I-O
(4)
Isolation Capacitance
(V = 0, f = 1.0 MHz)
—
0.5
pF
I-O
** All typicals at T = 25°C
A
© 2004 Fairchild Semiconductor Corporation
Page 3 of 12
1/21/04