MOC3081M, MOC3082M, MOC3083M — 6-Pin Zero-Cross Optoisolators Triac Driver Output (800 Volt Peak)
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified)
Individual Component Characteristics
Symbol
EMITTER
V
F
I
R
DETECTOR
I
DRM1
dv/dt
Peak Blocking Current,
Either Direction
Critical Rate of Rise of
Off-State Voltage
V
DRM
= 800V, I
F
= 0
(2)
I
F
= 0 (Figure 9)
(4)
600
10
1500
500
nA
V/µs
Input Forward Voltage
Reverse Leakage Current
I
F
= 30mA
V
R
= 6V
1.3
0.005
1.5
100
V
µA
Parameters
Test Conditions
Min.
Typ.*
Max.
Units
Transfer Characteristics
Symbol
I
FT
DC Characteristics
LED Trigger Current
Test Conditions
Main Terminal
Voltage = 3V
(3)
Device
MOC3081M
MOC3082M
MOC3083M
All
All
Min.
Typ.*
Max. Units
15
10
5
mA
V
TM
I
H
Peak On-State Voltage,
Either Direction
Holding Current, Either
Direction
I
TM
= 100mA peak,
I
F
= rated I
FT
1.8
500
3
V
µA
Zero Crossing Characteristics
Symbol
V
INH
I
DRM2
Characteristics
Test Conditions
Min.
Typ.*
12
Max.
20
2
Units
V
mA
Inhibit Voltage (MT1–MT2 voltage I
F
= Rated I
FT
above which device will not trigger)
Leakage in Inhibited State
I
F
= Rated I
FT
, V
DRM
= 800V,
off state
Isolation Characteristics
Symbol
V
ISO
Characteristics
Input-Output Isolation Voltage
(5)
Test Conditions
f = 60Hz, t = 1 sec.
Min.
7500
Typ.*
Max.
Units
Vac(pk)
*Typical values at T
A
= 25°C
Notes:
2. Test voltage must be applied within dv/dt rating.
3. All devices are guaranteed to trigger at an I
F
value less than or equal to max I
FT
. Therefore, recommended
operating I
F
lies between max I
FT
(15mA for MOC3081M, 10mA for MOC3082M, 5mA for MOC3083M) and
absolute max I
F
(60mA).
4. This is static dv/dt. See Figure 9 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
5. Isolation surge voltage, V
ISO
, is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are
common, and Pins 4, 5 and 6 are common.
©2005 Fairchild Semiconductor Corporation
MOC3081M, MOC3082M, MOC3083M Rev. 1.0.3
www.fairchildsemi.com
3
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
