FFB3904 / FMB3904 / MMPQ3904
Discrete POWER & Signal
Technologies
FFB3904
E2
B2
C1
FMB3904
C2
E1
C1
E1
C2
MMPQ3904
E2
B2
E3
B3
E4
B4
B1
B1
pin #1
B2
E2
pin #1
B1
E1
SC70-6
Mark: .1A
SuperSOT
™
-6
Mark: .1A
SOIC-16
C1
C2
C1
C3
C2
C4
C4
C3
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier. Sourced from Process 23.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
T
A
= 25°C unless otherwise noted
Parameter
Value
40
60
6.0
200
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
T
A
= 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
FFB3904
300
2.4
415
Max
FMB3904
700
5.6
180
MMPQ3904
1,000
8.0
125
240
Units
mW
mW/°C
°C/W
°C/W
°C/W
©
1998 Fairchild Semiconductor Corporation