FFB2222A / FMB2222A / MMPQ2222A
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
500
V
CE
= 5V
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
400
300
200
25 °C
125 °C
Collector-Emitter Saturation
Voltage vs Collector Current
0.4
β
= 10
0.3
125 °C
25 °C
0.2
100
- 40 °C
0.1
- 40 °C
0
0.1
0.3
1
3
10
30
100
I
C
- COLLECTOR CURRENT (mA)
300
1
10
100
I
C
- COLLECTOR CURRENT (mA)
500
V
-
BE(ON)
BASE-EMITTER ON VOLTAGE (V)
V
BESAT
- BASE-EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
β
= 10
Base-Emitter ON Voltage vs
Collector Current
1
V
CE
= 5V
0.8
- 40 °C
25 °C
0.8
- 40 °C
25 °C
0.6
0.6
125 °C
125 °C
0.4
0.4
1
I
C
10
100
- COLLECTOR CURRENT (mA)
500
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
25
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
500
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
20
CAPACITANCE (pF)
16
12
C te
100
10
1
0.1
V
CB
= 40V
f = 1 MHz
8
4
C ob
25
50
75
100
125
T
A
- AMBIENT TEMPERATURE (
°
C)
150
0.1
1
10
REVERSE BIAS VOLTAGE (V)
100
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
