NPN High Voltage Amplifier
(continued)
Typical Characteristics (continued)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
1
0.8
0.6
0.4
0.2
0.8
- 40 ºC
- 40 ºC
25 °C
25 °C
0.6
125 °C
125 °C
0.4
VCE = 1V
β
= 10
0.2
0.1
1
10
100
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
Collector-Base and Emitter-Base
Capacitance vs Reverse Bias Voltage
100
100
T
= 25 °C
A
VCB = 150V
50
20
10
5
C
eb
10
C
cb
2
1
1
25
1
10
100
1000
50
75
100
125
150
º
REVERSE BIAS VOLTAGE (V)
TA - AMBIENT TEMPERATURE ( C)
Power Dissipation vs
Ambient Temperature
1
0.75
0.5
SOT-223
TO-92
SOT-23
0.25
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
