MMBT3906SL — PNP Epitaxial Silicon Transistor
February 2008
MMBT3906SL
PNP Epitaxial Silicon Transistor
Features
• General purpose amplifier transistor.
• Ultra small surface mount package for all types(max 0.43mm tall)
• Suitable for general switching & amplification
• Well suited for portable application
• As complementary type, NPN MMBT3904SL is recommended.
• Pb free
C
E
B
SOT-923F
Marking : AB
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
J
T
STG
T
a
= 25°C unless otherwise noted
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature Range
Value
-40
-40
-5
200
150
-55 ~ 150
Unit
V
V
V
mA
°C
°C
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics*
T =25°C unless otherwise noted
a
Symbol
P
C
R
θJA
* Minimum land pad.
Parameter
Collector Power Dissipation, by R
θJA
Thermal Resistance, Junction to Ambient
Max
227
550
Unit
mW
°C/W
Electrical Characteristics*
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Test Condition
I
C
= -10μA, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -10μA, I
C
= 0
V
CE
= -30V, V
EB(OFF)
=-0.3V
V
CE
= 1V, I
C
=- 0.1mA
V
CE
= 1V, I
C
= -1mA
V
CE
= 1V, I
C
= -10mA
V
CE
= 1V, I
C
= -50mA
V
CE
= 1V, I
C
= -100mA
I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
V
CE
= -20V, I
C
= -10mA, f = 100MHz
V
CB
= -5V, I
E
= 0, f = 1MHz
V
EB
= -0.5V, I
C
= 0, f = 1MHz
V
CC
= -3V, I
C
= -10mA
I
B1
=- I
B2
= -1mA
Min.
-40
40
-5
Max.
Unit
V
V
V
-50
60
80
100
60
30
nA
300
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
C
ib
t
d
t
r
t
s
t
f
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
-0.25
-0.4
-0.65
250
7.0
15
35
35
225
75
-0.85
-0.95
V
V
V
V
MHz
pF
pF
ns
ns
ns
ns
* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%
© 2007 Fairchild Semiconductor Corporation
MMBT3906SL Rev. 1.0.0
1
www.fairchildsemi.com
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